A spin transport model is employed to study the effects of spin dephasing induced by diffusiondriven transittime uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. May 17, 2007 coherent spin transport in silicon has remained elusive despite its theoretically very long spin lifetime, which would make it an ideal material for spintronics applications. The electron spin lifetime and diffusion length are transport parameters that define the scale of coherence in spintronic devices and circuits. Appelbaums research is now funded in part with a nearly halfmillion dollar grant from the u. Handbook of spin transport and magnetism crc press book. If the address matches an existing account you will receive an email with instructions to reset your password. Appelbaum s research is now funded in part with a nearly halfmillion dollar grant from the u. Students will have opportunity to work on the topics of nonvolatile memory devices, i. Greens function theory for diluted magnetic semiconductor at finite temperature, phys.
Strong spinorbit interaction and timereversal symmetry in topological insulators enable the spinmomentum locking for the helical surface states. Solidstate electronics based on electron spin spintronics a portmanteau meaning spin transport electronics, also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge. Formfamily, occupation, recreation, motivationfamilyfrom1. This cited by count includes citations to the following articles in scholar. Silicon is also one of the most commonly used semiconductor. Ian appelbaum university of maryland, college park verified email at physics. International conference on novel aspects of spinpolarized transport and spin dynamics, at washington dc. A major goal in spintronics is to reach the precise level of control over electron spin that modern electronics has executed over electron charge.
Used in the office or at a neutral location with pointers. Ian appelbaum, now at the university of maryland, us, and coworkers managed to transport spinpolarised electrons in silicon over a distance of several millimetres. With this bdependent total spin relaxation rate, we are able to simulate the spinvalve experiment data, using a driftdi usion model 5,31 that takes into account the transit time uncertainty, and hence spin orientation distribution at the detector. Electrical detection of the spin polarization due to. Electrical detection of spinpolarized surface states. Wide bandgap ganbased semiconductors for spintronics. April 1719, 2009 at the stanford sierra conference center. The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. The authors propose and analyze a fourterminal metalsemiconductor device that uses hotelectron transport through thin ferromagnetic films to inject and detect a chargecoupled spin current transported through the conduction band of an arbitrary semiconductor. Spin precession and dephasing hanle effect provide an unambiguous means to establish the presence of spin transport in semiconductors. Spintronics at nanoscale flatband ferromagnetism in armchair nanoribbons and nanotubes. Since ferromagnetic metals have a large asymmetry between the spinup and spindown density of states and therefore high spin polarization at the fermi level, it is natural to assume that ohmic transport of these electrons into a semiconductor will provide a. In order to understand this new field of magnetism research, it is necessary to take a step back and revisit conventional electronics.
May 18, 2007 ian appelbaum and colleagues 1 have made a device in which a 10mthick layer of undoped silicon is sandwiched between two ultrathin ferromagnetic layers that act as spin filters. Ian appelbaum is looking to spin his research on the magnetic properties of electrons to get more electronic enhancements from semiconductors. It reveals how key phenomena first discovered in one class of materials, such as spin injection in metals, have been revisited decades later in other materials systems, including. Ian appelbaum and colleagues 1 have made a device in which a 10mthick layer of undoped silicon is sandwiched between two ultrathin ferromagnetic layers that act as spin filters. Robert anderson quantum information and semiconductor physics richard l. To us this is the holy grail of semiconductor spintronics, says physicist and electrical engineer ian appelbaum of the university of delaware in.
Ibmstanford spintronic science and applications center past. The ones marked may be different from the article in the profile. A spin transport model is employed to study the effects of spin dephasing induced by diffusiondriven transittime uncertainty through semiconductor spintronic devices where. Frontiers in electronics contains the selected best papers presented at the workshop on frontiers in electronics wofe07. In this letter, we report the electrical detection of spinpolarized surface states conduction using a coal 2 o 3 ferromagnetic tunneling contact in which the compound topological insulator bi 0. We compare theoretical modeling with experimental data from driftdominated silicon spintransport devices, illustrating the nontrivial consequences of employing oblique magnetic fields due to misalignment or intentional, fixed inplane field. Electronic materials article pdf available in materials today 10s 78. The charge current in the bulkinsulating topological insulator bi1.
A haynesshockley experiment for spinpolarized electron. Ian appelbaum evidence of spin precession and dephasing hanle effect induced by an external magnetic field is the only unequivocal proof of spinpolarized conduction electron transport in. Diluted magnetic semiconductor dms materials, which can utilize both the spin and the charge properties of carriers, have become attractive because of interest in investigations of the fundamental physical properties of such materials and in potential applications for many promising spintronic devices. Professor ian appelbaum department of physics in semiconductor spintronics, silicon attracts great attention due to its long electron spin lifetime. Department of defense experimental program to stimulate competitive research. The experiment, conducted in the laboratory of ian appelbaum, assistant professor of electrical and computer engineering at ud, with doctoral student biqin huang. Pdf oblique hanle effect in semiconductor spin transport.
Phd research opportunities are available at the spintronics device laboratory, school of physical and mathematical sciences physics division, nanyang technological university, singapore. July 29, 2016 address physical sciences complex, university of maryland, college park phone 301 3377461. We use a solidstate tunnel junction to inject hot electrons from a ferromagnetic fm thin film, through a nonmagnetic alcu multilayer in schottky contact with an. Abstract hot electron injection into uniaxially strained. Electrical detection of the spin polarization due to charge.
Spin precession and dephasing hanle effect provides an unambiguous means to establish the presence of spin transport in semiconductors. Bill cullen is the most experienced scientist in our lab about uhv systems and surface physics, and helped me a lot when i had problems in experiment. Frontiers in electronics selected topics in electronics. Spintronics breaks the silicon barrier scientific american. He is coordinating the organization of both gmag sponsored or cosponsored focus topics and the gmag invited symposia. These devices have wide applications in spinvalve transistor, spinlight emitting diodes, nonvolatile memory, optical isolator and ultrafast. Frontiers in electronics selected topics in electronics and. Ibmstanford spintronic science and applications center. Spintronics wikipedia we hate news, more than you do. Oct 04, 2019 solidstate electronics based on electron spin spintronics a portmanteau meaning spin transport electronics, also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solidstate devices. The problems of spinpolarized electron injection and detection are central to the field of semiconductor spintronics.
Spin dephasing in driftdominated semiconductor spintronics. Since these parameters are many orders of magnitude larger in semiconductors than in metals, semiconductors could be the most suitable for spintronics. Raman and optical characterization of multilayer turbostratic graphene grown via chemical vapor deposition daniel r. Professor ian appelbaum department of physics in semiconductor spintronics, silicon attracts great attention due to its long. Ian appelbaum curriculum vitae address physical sciences complex, university of maryland, college park phone 301 3377461. Spintronics a portmanteau meaning spin transport electronics, also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solidstate devices. Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role.
Electronic measurement and control of spin transport in silicon. Ian appelbaum university of maryland, college park. Download fulltext pdf download fulltext pdf silicon and spintronics, together at last. Thus far, spin transport has only been measured in directbandgap semiconductors or in combination. Introduction to spinpolarized ballistic hot electron. Getting a useful spin current into a semiconductor in the first place is a different matter see box p48. Greene superconductivity and other novel materials. We detected the spin polarization due to charge flow in the spin nondegenerate surface state of a threedimensional topological insulator by means of an allelectrical method. Fuhrer journal of applied physics 110, 0720 2011 download pdf or arxiv.
Investigations on cobalt doped gan for spintronic applications. Electronic measurement and control of spin transport in. Remembering kenneth keniston, founder of the mit program in science, technology, and society. Handbook of spin transport and magnetism provides a comprehensive, balanced account of the state of the art in the field known as spin electronics or spintronics. Spintronics is a field that keeps both scientists and engineers excited from a fundamental physics and applications perspective. Getting a useful spin current into a semiconductor in the first place is. This years meeting brings together world leading experts in the field of quantum spintronics to discuss recent developments in the driving mechanism of magnetic domains, the anomalous hall effect, the spin hall effect, the quantum spin hall effect, the persistent spin helix and novel spin physics in transition metal oxides. Iiiv semiconductors, carsten timm magnetism of dilute oxides, j. Ian prukner recruiting interview used at the frontend of your recruiting presentations. Jun 25, 2007 the authors propose and analyze a fourterminal metalsemiconductor device that uses hotelectron transport through thin ferromagnetic films to inject and detect a chargecoupled spin current trans.
Center for nanophysics and advanced materials cnam prior to july 2007 cnam was known as the center for superconductivity research csr faculty by seniority. Citations are the number of other articles citing this article, calculated by crossref and updated daily. Spintronics twodimensional materials semiconductor device physics. Tunneling magnetoresistance, spintransfer and spinorbitronics with ga,mnas. Renormalizationgroup potential in quasi1d correlated systems, phys. Article views are the countercompliant sum of full text article downloads since november 2008 both pdf and html across all institutions and individuals. Resistance voltage hysteresis with the amplitude up to about 10. Hot electron injection into uniaxially strained silicon hyun soo kim, master of science, 20 thesis directed by. The field of spintronics concerns spincharge coupling in metallic systems. These metrics are regularly updated to reflect usage leading up to the last few days. Oblique hanle effect in semiconductor spin transport.
Jaffres and jean marie george spin transport in organic semiconductors, valentin dediu, luis e. To date, however, there has been little report of direct electrical spin injectiondetection in topological insulator. Hueso, and ilaria bergenti spin transport in ferromagnetiiiv. Coherent spin transport in silicon has remained elusive despite its theoretically very long spin lifetime, which would make it an ideal material for spintronics applications. Wide bandgap ganbased semiconductors for spintronics sjpearton 1,crabernathy,gtthaler 1,rmfrazier,dpnorton1, fren2,ydpark3,jmzavada4,iabuyanova5,wmchen5 and a f hebard6 1 department of materials science and engineering, university of florida, gainesville, fl 32611, usa 2 department of chemical engineering, university of florida, gainesville. The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes. This meeting was the fifth in the series of wofe workshops, and strongly reinforced the tradition of scientific quality and visionary research. Ian appelbaum for discussing topological insulators, giving me advice on spintronics experiment and helping me to choose the right place for a postdoc job. In this letter, we report the electrical detection of spinpolarized surface states conduction using a coal2o3 ferromagnetic. Coey tunneling magnetoresistance and spin transfer with ga,mnas, h.
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